ASE / ASE-HRM

The ASE Process is the market-leading deep reactive ion etch (DRIE) process from STS plc, used for deep anisotropic silicon etching.  Based upon the original 'Bosch Process', licenced to STS in 1994, STS was the first equipment supplier to manufacture a commercial silicon etch source based on this technology.   Since then, STS have continued to improve process capability, ease of use, reliability and maintainability of the equipment.

Key advantages over other DRIE sources

• Market-leading process capability including high etch rates, high aspect ratios and smooth sidewalls
• Enhanced patented SOI technology to minimise notching at insulator layer
• Patented Parameter Ramping to control process parameters and etch profile at high aspect ratios
• Largest installed base and 10 years experience as market-leaders

STS offers a choice of 3 ASE source configurations depending on the process performance required. There is the standard rate ICP^ASE source offering etch rates comparable with the original Bosch Process, and a high rate source, the HRM^ASE, which was launched in 2001, and offers etch rates typically 3-4 times faster than the standard rate source.

In June 2005, STS launched the latest generation source for ASE processing, named Pegasus.  It provides a 30% increase in etch rate compared to the HRM^ASE and significantly improves selectivity and cross-wafer uniformity on substrates up to 200mm.

Standard Rate ICPASE source	High Rate HRMASE source
STS 'PegasusASE' source