STS Etch and Deposition Technologies

STS employ a wide range of technologies developed for etch and deposition equipment. STS' etch technology utilises dedicated plasma source designs for different market driven applications. The deposition technology offers exceptional across wafer uniformity and with the integration of the Liquid Delivery System, is capable of a depositing a broad range of materials. All systems offer advanced process control ensuring our customer’s process requirements are met.

Advanced Deep Reactive Ion etching (DRIE) Utilising Pegasus ASE® decoupled source technology
	Market leading de-coupled source design Market leading etch rates enabled by a revolutionary design that delivers higher power than conventional DRIE Plasma generation area that is larger than conventional designs resulting in a better performance for larger wafer formats
Well established ICP technology that provides a highly flexible process module - "broad process window"
	Capable of both physical and chemical etch processes Demonstrated processes include: polymer etches; dielectric etches; compound semiconductors; metals; ferroelectric; and piezoelectric materials Can also be used for large range of other processes including DRIE
Dedicated dielectric and insulator etch technology utilising APS source design
	Specifically designed for "physical etch processes" Improved performance for a wide range of "Hard Materials including SiC, SiO2, and quartz The module delivers higher etch rates, improved selectivity and cleaner processes
Deposition technology including Liquid Delivery Systems (LDS)
	Plasma Enhanced Chemical Vapour Deposition (PECVD) processes for depositing a wide range of organic, inorganic, doped and updoped thin films STS PECVD system offers high deposition rates, excellent cross-wafer uniformity and "quick-clean" procedure to increase yield and throughput Optional Liquid Delivery System allows use of low vapour pressure pre-cursors such as TEOS