PECVD

PECVD (Plasma Enhanced Chemical Vapor Deposition) is based on the decomposition of a gaseous compound near the substrate surface.

STS PECVD processes are the result of over 10 years intensive development, and are used throughout the world to deposit a wide range of inorganic and organic, doped and undoped films.  For silicon-based films, STS equipment is compatible with either silane or TEOS-based precursors.

Key advantages of STS' PECVD technology

• High deposition rates
• High thickness and refractive index uniformity
• Reproducible film properties
• Low particulate contamination
• Low pressure
• Wide temperature range options
• Optional dual frequency RF to control film stress
• Optional Liquid Delivery Source (LDS)
• Automatic Endpoint
• Easy-clean showerhead