MEMS

MEMS GyroscopeProcessing of MEMs devices covers a plethora of applications and materials, and tailoring of processes is essential to the success of the device. Understanding the contribution of process and equipment design to the results is fundamental to achieving the optimum results. STS has the experience and strives to continually enhance its products, to move forward and meet the challenges of tomorrow’s device requirements.

Key Processing Challenges

  • Faster etch rates – to reduce process times and costs
  • Smooth sidewalls
  • High aspect ratio etching
  • Etching to etch stop layers (membranes, SOI, glass)
  • Handling of thin and fragile wafers
  • Deposition of stress-free membranes

Experience gained over the last 10 years has enabled STS to develop processes that tackle the most complex device design issues. STS’ competitive advantage for MEMS deep silicon etch lies in its unique proprietary process technology enhancements.

The SOI kit overcomes the problem of notching at Si:SiO2 or glass interfaces and Parameter Ramping enables the process conditions to be altered over a time period enabling solutions for CD control, high aspect ratio etching, smooth sidewalls as a few examples.

In addition to the market-leading deep silicon etch technology, for which STS is so well-known, the company also offers other process technologies utilized for MEMS manufacturing, such as AOETM (dielectric etch), PECVD, ICP, RIE and release etching using XeF2.

STS has also formed strategic relationships with other MEMS equipment suppliers to offer a ‘value-add’ service to customers by increasing our processing footprint within the industry.  These include:

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