ICP

STS’ ICP system combines a high conductance, high vacuum compatible process chamber with a patented ICP source to produce a very high ion density at low pressures.

Key Advantages of STS' ICP technology

• High ion density - high etch rates
• Low pressure - reduced scattering and improved anisotropy
• Wide process window
• Choice of electrostatic or mechanical clamping
• Enhanced substrate cooling using helium back-cooling and temperature controlled electrode
• High conductance pumping - controlled gas flows
• Choice of endpoint options, including OES or LEPD