Dielectric Etching

Introduced at the end of 1999, the Advanced Oxide Etch (AOE^TM) source is a revolutionary design, based on STS' well-established Inductively Coupled Plasma (ICP) technology.  The AOE^TM source was originally conceived to overcome the limitations of conventional high density plasma sources for SiO₂ deep etch applications.

Over time the design of the AOE^TM source has made it suitable for a number of ion-driven etch process, with the result being its widespread adoption for quartz, fused silica, LiNbO₃, and SiC throughout the optoelectronics and MEMS industries.  With the expanding non-oxide etch applications it was decided to re-name the source APS (Advanced Physical Source).

For most applications where etch rate and high aspect ratio are not limiting factors, dielectric etch is still carried out using conventional RIE technology.  Applications requiring higher etch rates, high aspect ratios, increased selectivity higher density sources such as ICP systems should be utilized.

Key advantages of the AOE/APS over conventional HDP sources

• Patent-protected coil & magnetic confinement
• Reduced clean frequency and downtime
• Increased etch rate
• Reduces cost per wafer