Semiconductor International Homepage
Technology Library
Join Technology Library
Search
Contact Us
Click here to receive Technology Library updates

Thick photosensitive Dielectric

Position of WPR-Series in Insulation Materials

1 Process Conditions
WPR-1020 WPR-1050 WPR-1201
2 Thickness 3 µm 6 µm 20 µm
3 Prebake 110C / 2min 110C / 3min 110C / 3min
4 Exposure 200 mJ/cm2
(g, h, i-line) 		600 mJ/cm2 1,000mJ/cm2
5 PEB 110C / 2min 110C / 3min 110C / 5min
6 Development 60sec / 2.38wt% TMAH 60sec / 2.38wt% TMAH 120sec / 2.38wt% TMAH
7 Rinse 30sec / DI water 30sec / DI water 30sec / DI water

8

Pre cure - - -
9 Post bake 190C / 60min 190C / 60min 190C / 60min

Item

Properties Conditions
WPR-1020 WPR-1050 WPR-1201
Glass transition temperature (Tg) 220 C 240 C
210 C

TMA method

CTE (-65C~150C) 53 ppm 53 ppm
56 ppm

TMA method

Tensile strength 72 MPa 90 MPa
90 MPa

Tension test
5 mm/min
Film thickness ; 50µm

Elastic modulus 2.2 GPa 2.3 GPa
2.2 GPa
Elongation 6.0 % 6.0 %
6.4 %
Water absorption 1.4 % 1.3 %
1.5 %

23C/24h in water

Volume resistivity 2.0x1015 Wcm 7.0x1015 Wcm
6.0x1015 Wcm Film Thickness ; 10 µm
Dielectric constant 3.6 3.6
3.6 Frequency ; 1 MHz
Dissipation factor 0.028 0.029
0.030
Thermal decomposition temperature 267C (1% loss)
342C (5% loss) 		265C (1% loss)
340C (5% loss)
268C (1% loss)
345C (5% loss) 		TGA method
5C/min in Air
Inter circuits insulation
(HAST) 		>1011 W >1011 W
>1011 W 121C/85%RH/5V/200h
L/S=20/20µm
PCT resistance OK OK OK 121C/100%RH/168h

Visit Semiconductor l Visit JSR Micro  l Contact Us

Information hosted in the Technology Library is supplied by Semiconductor International partners and is not created or endorsed by Semiconductor International staff.